Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3
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Title
Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3
Authors
Keywords
-
Journal
PHYSICAL REVIEW LETTERS
Volume 105, Issue 17, Pages -
Publisher
American Physical Society (APS)
Online
2010-10-20
DOI
10.1103/physrevlett.105.176602
References
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Related references
Note: Only part of the references are listed.- Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
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