4.6 Article

Operational stability enhancement of low-voltage organic field-effect transistors based on bilayer polymer dielectrics

Journal

APPLIED PHYSICS LETTERS
Volume 103, Issue 13, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4822181

Keywords

-

Funding

  1. National Basic Research Development Program of China (973 Program) [2010CB934503, 2011CB808404]
  2. National Natural Science Foundation of China [61006015, 51033007, 61274019]
  3. Natural Science Foundation of Jiangsu Province [BK2010220]

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Bilayer polymer dielectrics consisting of hydrophobic thin layers on high-k polyvinylalcohol (PVA) are utilized to realize p-type and n-type low-voltage organic field-effect transistors (OFETs), which show superior mobility and operational stability compared with the devices with PVA single-layer dielectric. The OFETs with top layers containing discrete pi-groups, such as polystyrene (PS) and poly(2-vinyl naphthalene) (PVN), show stronger bias stress instability than those with pi-group free polymethylmethacrylate (PMMA), and it is ascribed to slow charge trapping into the pi-groups under bias stress. By integrating p-type and n-type low-voltage OFETs based on PMMA/PVA bilayer dielectric, a low-power high-stability complementary inverter is achieved. (C) 2013 AIP Publishing LLC.

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