Defect study of molecular beam epitaxy grown undoped GaInNAsSb thin film using junction-capacitance spectroscopy

Title
Defect study of molecular beam epitaxy grown undoped GaInNAsSb thin film using junction-capacitance spectroscopy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 7, Pages 074104
Publisher
AIP Publishing
Online
2013-02-22
DOI
10.1063/1.4793430

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