Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy

Title
Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 11, Pages 114910
Publisher
AIP Publishing
Online
2012-12-12
DOI
10.1063/1.4768716

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