High conductivity in Si-doped GaN wires

Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

(2012) Eunsoon Oh et al.   APPLIED PHYSICS LETTERS

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

(2012) S. Fritze et al.   APPLIED PHYSICS LETTERS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Spatially resolved Hall effect measurement in a single semiconductor nanowire

(2012) Kristian Storm et al.   Nature Nanotechnology

Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

(2011) A.-L. Bavencove et al.   ELECTRONICS LETTERS

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

(2011) Robert Koester et al.   NANO LETTERS

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

(2011) A. Wolos et al.   PHYSICAL REVIEW B

Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

(2010) X. J. Chen et al.   APPLIED PHYSICS LETTERS

A single-step electron beam lithography of buried nanostructures using cathodoluminescence imaging and low temperature

(2010) Fabrice Donatini et al.   NANOTECHNOLOGY

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

(2009) Florian Werner et al.   NANO LETTERS

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

(2009) R Koester et al.   NANOTECHNOLOGY

Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements

(2008) T. Richter et al.   NANO LETTERS