Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition

Few electron double quantum dot in an isotopically purified 28Si quantum well

(2012) A. Wild et al.   APPLIED PHYSICS LETTERS

Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures

(2012) S.-H. Huang et al.   APPLIED PHYSICS LETTERS

Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K

(2012) Chiao-Ti Huang et al.   IEEE ELECTRON DEVICE LETTERS

Coherent singlet-triplet oscillations in a silicon-based double quantum dot

(2012) B. M. Maune et al.   NATURE

Electron spin coherence exceeding seconds in high-purity silicon

(2011) Alexei M. Tyryshkin et al.   NATURE MATERIALS

Hyperfine interactions in silicon quantum dots

(2011) Lucy V. C. Assali et al.   PHYSICAL REVIEW B

Scattering mechanism in modulation-doped shallow two-dimensional electron gases

(2010) D. Laroche et al.   APPLIED PHYSICS LETTERS

Quantum computers

(2010) T. D. Ladd et al.   NATURE