Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K

Published 2012 View Full Article

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Title
Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 1, Pages 21-23
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-12-14
DOI
10.1109/led.2012.2228160

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