Atom-by-atom simulations of graphene growth by decomposition of SiC (0001): Impact of the substrate steps
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Atom-by-atom simulations of graphene growth by decomposition of SiC (0001): Impact of the substrate steps
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 14, Pages 141602
Publisher
AIP Publishing
Online
2013-10-05
DOI
10.1063/1.4824425
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors
- (2013) Zelei Guo et al. NANO LETTERS
- High-quality graphene on SiC(0001¯) formed through an epitaxial TiC layer
- (2013) Keisuke Kimura et al. PHYSICAL REVIEW B
- Model and simulations of the epitaxial growth of graphene on non-planar 6H–SiC surfaces
- (2012) Fan Ming et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Graphene applications in electronics and photonics
- (2012) Phaedon Avouris et al. MRS BULLETIN
- A roadmap for graphene
- (2012) K. S. Novoselov et al. NATURE
- First-principles calculation of0th-layer graphene-like growth of C on SiC(0001)
- (2012) Masato Inoue et al. PHYSICAL REVIEW B
- Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
- (2011) Hiroyuki Kageshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Model for the epitaxial growth of graphene on 6H-SiC(0001)
- (2011) Fan Ming et al. PHYSICAL REVIEW B
- Formation mechanism of graphene layers on SiC (0001¯) in a high-pressure argon atmosphere
- (2011) Wataru Norimatsu et al. PHYSICAL REVIEW B
- Transmission Electron Microscope Observation of Interface Structures of Graphene on 6H-SiC
- (2010) Wataru Norimatsu et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Selective formation of ABC-stacked graphene layers on SiC(0001)
- (2010) Wataru Norimatsu et al. PHYSICAL REVIEW B
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- (2009) Hiroyuki Kageshima et al. Applied Physics Express
- Formation process of graphene on SiC (0001)
- (2009) W. Norimatsu et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Transitional structures of the interface between graphene and 6H–SiC (0001)
- (2008) Wataru Norimatsu et al. CHEMICAL PHYSICS LETTERS
- Growth of graphene structure on 6H-SiC(0001): Molecular dynamics simulation
- (2008) Chao Tang et al. JOURNAL OF APPLIED PHYSICS
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- (2008) S. V. Morozov et al. PHYSICAL REVIEW LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started