Bias stress effect in polyelectrolyte-gated organic field-effect transistors
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Title
Bias stress effect in polyelectrolyte-gated organic field-effect transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 11, Pages 113306
Publisher
AIP Publishing
Online
2013-03-22
DOI
10.1063/1.4798512
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Related references
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- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
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- Relationships of Acid and Water Content to Proton Transport in Statistically Sulfonated Proton Exchange Membranes: Variation of Water Content Via Control of Relative Humidity
- (2008) Timothy J. Peckham et al. JOURNAL OF PHYSICAL CHEMISTRY B
- Molecular Ordering and Interface State Modification for Reducing Bias-Induced Threshold Voltage Shift in Pentacene Field-Effect Transistors
- (2008) Chang Bum Park et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Bottom-up organic integrated circuits
- (2008) Edsger C. P. Smits et al. NATURE
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