Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 17, Pages 173507
Publisher
AIP Publishing
Online
2013-05-04
DOI
10.1063/1.4804430
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Electronic compressibility of layer-polarized bilayer graphene
- (2012) A. F. Young et al. PHYSICAL REVIEW B
- Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
- (2012) A.K.M. Newaz et al. Nature Communications
- Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor
- (2011) Huilong Xu et al. ACS Nano
- The role of charge traps in inducing hysteresis: Capacitance–voltage measurements on top gated bilayer graphene
- (2011) Gopinadhan Kalon et al. APPLIED PHYSICS LETTERS
- Measurements and microscopic model of quantum capacitance in graphene
- (2011) Huilong Xu et al. APPLIED PHYSICS LETTERS
- Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors
- (2011) Kosuke Nagashio et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Electrical transport properties of graphene on SiO2 with specific surface structures
- (2011) K. Nagashio et al. JOURNAL OF APPLIED PHYSICS
- Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric
- (2010) Babak Fallahazad et al. APPLIED PHYSICS LETTERS
- Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
- (2010) Kosuke Nagashio et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics
- (2010) Zhenxing Wang et al. NANO LETTERS
- Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions
- (2010) Myrsini Lafkioti et al. NANO LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Density of States and Zero Landau Level Probed through Capacitance of Graphene
- (2010) L. A. Ponomarenko et al. PHYSICAL REVIEW LETTERS
- Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
- (2009) Seyoung Kim et al. APPLIED PHYSICS LETTERS
- Measurement of the quantum capacitance of graphene
- (2009) Jilin Xia et al. Nature Nanotechnology
- Effect of a High-κEnvironment on Charge Carrier Mobility in Graphene
- (2009) L. A. Ponomarenko et al. PHYSICAL REVIEW LETTERS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Substrate-limited electron dynamics in graphene
- (2008) S. Fratini et al. PHYSICAL REVIEW B
- Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering
- (2008) C. Jang et al. PHYSICAL REVIEW LETTERS
- Temperature-Dependent Transport in Suspended Graphene
- (2008) K. I. Bolotin et al. PHYSICAL REVIEW LETTERS
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- (2008) S. V. Morozov et al. PHYSICAL REVIEW LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now