Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors
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Title
Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 7, Pages 070108
Publisher
Japan Society of Applied Physics
Online
2011-07-20
DOI
10.1143/jjap.50.070108
References
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Related references
Note: Only part of the references are listed.- Contact resistivity and current flow path at metal/graphene contact
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- (2009) Raghunath Murali et al. APPLIED PHYSICS LETTERS
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- (2009) Fengnian Xia et al. NANO LETTERS
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- (2009) Young-Jun Yu et al. NANO LETTERS
- Contact resistance in graphene-based devices
- (2009) S. Russo et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Electronic doping and scattering by transition metals on graphene
- (2009) K. Pi et al. PHYSICAL REVIEW B
- The electronic properties of graphene
- (2009) A. H. Castro Neto et al. REVIEWS OF MODERN PHYSICS
- Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
- (2009) P. Blake et al. SOLID STATE COMMUNICATIONS
- Contact and edge effects in graphene devices
- (2008) Eduardo J. H. Lee et al. Nature Nanotechnology
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- (2008) B. Huard et al. PHYSICAL REVIEW B
- Doping Graphene with Metal Contacts
- (2008) G. Giovannetti et al. PHYSICAL REVIEW LETTERS
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