Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

(2012) J. J. Wierer et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

All-InGaN Phosphorless White Light Emitting Diodes: An Efficiency Estimation

(2012) C. Kolper et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

(2012) Dario Schiavon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Light extraction enhancement of GaN-based LEDs through passive/active photon recycling

(2011) Ching-Cherng Sun et al.   OPTICS COMMUNICATIONS

II–VI semiconductor color converters for efficient green, yellow, and red light emitting diodes

(2010) M. A. Haase et al.   APPLIED PHYSICS LETTERS

Enhanced efficiency of CdMgZnSe down-converted light emitting diodes using light extraction features fabricated by laser-speckle lithography

(2010) Zhaohui H. Yang et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE