Spin-polarization of VGaON center in GaN and its application in spin qubit

Room temperature coherent control of defect spin qubits in silicon carbide

(2011) William F. Koehl et al.   NATURE

A quantum memory intrinsic to single nitrogen–vacancy centres in diamond

(2011) G. D. Fuchs et al.   Nature Physics

Nature of deep center emissions in GaN

(2010) A. Sedhain et al.   APPLIED PHYSICS LETTERS

First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silicon carbide

(2010) Fengchun Pan et al.   JOURNAL OF APPLIED PHYSICS

Quantum computing with defects

(2010) J. R. Weber et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Theory of Spin-Conserving Excitation of theN−V−Center in Diamond

(2009) Adam Gali et al.   PHYSICAL REVIEW LETTERS

Coherent manipulation of single spins in semiconductors

(2008) Ronald Hanson et al.   NATURE

Magnetic State around Cation Vacancies in II–VI Semiconductors

(2008) T. Chanier et al.   PHYSICAL REVIEW LETTERS

Defect-Induced Intrinsic Magnetism in Wide-Gap III Nitrides

(2008) Pratibha Dev et al.   PHYSICAL REVIEW LETTERS

Ab InitioElectronic and Optical Properties of theN−V−Center in Diamond

(2008) Faruque M. Hossain et al.   PHYSICAL REVIEW LETTERS