Spin-polarization of VGaON center in GaN and its application in spin qubit

VGaON center in cubic gallium nitride is a defect complex composing of a substitutional oxygen atom at nitrogen site (O-N) and an adjacent gallium vacancy (V-Ga). Based on first-principles calculations, we predicted that this VGaON center has much in common with the famous nitrogen-vacancy center in diamond, but the excitation energy is very low. The electron spin-polarization of the centers can be tuned by changing the charge states. The neutral ONVGa center has the nu(down arrow) and e(xy)(down arrow) states being well isolated from the bulk bands with appropriate spacing which are suitable for achieving spin qubit operation with low excitation energy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712595]