Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots

Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs1−xSbx quantum dots

(2012) Kazutaka Nishikawa et al.   JOURNAL OF APPLIED PHYSICS

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

(2011) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

(2009) Yu-An Liao et al.   APPLIED PHYSICS LETTERS

Ferromagnetic Compounds for High Efficiency Photovoltaic Conversion: The Case of AlP:Cr

(2009) P. Olsson et al.   PHYSICAL REVIEW LETTERS

Simultaneous determination of carrier lifetime and electron density-of-states in P3HT:PCBM organic solar cells under illumination by impedance spectroscopy

(2009) Germà Garcia-Belmonte et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer

(2008) Wen-Hao Chang et al.   APPLIED PHYSICS LETTERS

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

(2008) Y. D. Jang et al.   APPLIED PHYSICS LETTERS

Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dots

(2008) Ryuji Oshima et al.   JOURNAL OF CRYSTAL GROWTH

Quantum Dot Solar Cells. Tuning Photoresponse through Size and Shape Control of CdSe−TiO2Architecture

(2008) Anusorn Kongkanand et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Quantum-dot intermediate-band solar cells with inverted band alignment

(2008) A. Franceschetti et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES