Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes

(2011) Suman De et al.   ADVANCED FUNCTIONAL MATERIALS

Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes

(2011) Suman De et al.   APPLIED PHYSICS LETTERS

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

(2011) Jochen Bruckbauer et al.   APPLIED PHYSICS LETTERS

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

(2011) Jonas Lähnemann et al.   PHYSICAL REVIEW B

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

(2010) Wei Guo et al.   NANO LETTERS

Theory of reduced built-in polarization field in nitride-based quantum dots

(2010) S. Schulz et al.   PHYSICAL REVIEW B

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics