期刊
APPLIED PHYSICS LETTERS
卷 101, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4754079
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资金
- DST (IRPHA), India
- IIT-Bombay
- CSIR (India) [80(0070)/08/EMR-II]
The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In, Ga) N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754079]
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