Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

Published 2009 View Full Article

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Title
Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 3, Pages 033916
Publisher
AIP Publishing
Online
2009-02-12
DOI
10.1063/1.3068186
References
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