Direct measurement of surface states density and energy distribution in individual InAs nanowires

Correction to “GaAs and InAs Nanowires for Ballistic Transport” [Jul/Aug 11 922-934]

(2011) Hadas Shtrikman et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Direct Measurement of Individual Deep Traps in Single Silicon Nanowires

(2011) E. Koren et al.   NANO LETTERS

III–V semiconductor nanowires for optoelectronic device applications

(2011) Hannah J. Joyce et al.   PROGRESS IN QUANTUM ELECTRONICS

The role of the cantilever in Kelvin probe force microscopy measurements

(2011) George Elias et al.   Beilstein Journal of Nanotechnology

Si–InAs heterojunction Esaki tunnel diodes with high current densities

(2010) M. T. Björk et al.   APPLIED PHYSICS LETTERS

Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

(2010) R. Timm et al.   APPLIED PHYSICS LETTERS

Doping Incorporation in InAs nanowires characterized by capacitance measurements

(2010) Gvidas Astromskas et al.   JOURNAL OF APPLIED PHYSICS

Electron transport in indium arsenide nanowires

(2010) Shadi A Dayeh   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements

(2009) Erik C. Garnett et al.   Nature Nanotechnology

InAs nanowire metal-oxide-semiconductor capacitors

(2008) Stefano Roddaro et al.   APPLIED PHYSICS LETTERS

Role of Molecular Surface Passivation in Electrical Transport Properties of InAs Nanowires

(2007) Qingling Hang et al.   NANO LETTERS