Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device

Electric Field and Excimer Laser Nanostructuring of Ni and Si Thin Films

(2011) Prashant Kumar  

Approaches for improving the performance of filament-type resistive switching memory

(2011) WenTai Lian et al.   CHINESE SCIENCE BULLETIN

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{AlO}_{y}$ Incorporation Into $\hbox{HfO}_{x}$ Switching Dielectrics

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Electric Breakdown Between Nanogap Separated Platinum Electrodes

(2011) Prashant Kumar et al.   Nanoscience and Nanotechnology Letters

Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni

(2010) L. Goux et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Directed Self-Assembly: Expectations and Achievements

(2010) Prashant Kumar   Nanoscale Research Letters

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Impact of incorporated Al on the TiN/HfO[sub 2] interface effective work function

(2008) Ka Xiong et al.   JOURNAL OF APPLIED PHYSICS

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

(2007) Seunghyup Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY