HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor

(2011) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Improved Electrical Properties of HfO2-Based Gate Dielectrics on InP Substrate Using Al2O3/HfO2 and SF6 Plasma Treatment

(2011) Yanzhen Wang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

(2010) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS

Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric on InP Substrate

(2010) Yen-Ting Chen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

(2009) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

(2008) S. Koveshnikov et al.   APPLIED PHYSICS LETTERS

Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

(2008) Han Zhao et al.   APPLIED PHYSICS LETTERS

High-k gate stack on germanium substrate with fluorine incorporation

(2008) Ruilong Xie et al.   APPLIED PHYSICS LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS