Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

Enhanced crystallization of GeTe from an Sb2Te3 template

(2012) R. E. Simpson et al.   APPLIED PHYSICS LETTERS

Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials

(2011) Y. Sutou et al.   ACTA MATERIALIA

Mechanism of Oxidation on Si2Sb2Te5Phase Change Material and Its Application

(2011) Ting Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nitrogen contribution to N-doped GeTe (N: 8.4 at.%) in the structural phase transition

(2010) Y.M. Lee et al.   CURRENT APPLIED PHYSICS

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

(2010) Luca Perniola et al.   IEEE ELECTRON DEVICE LETTERS

Crystallization times of Ge–Te phase change materials as a function of composition

(2009) S. Raoux et al.   APPLIED PHYSICS LETTERS