A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions—A spin dependent recombination study

An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

(2011) C. J. Cochrane et al.   JOURNAL OF APPLIED PHYSICS

EPR study of conduction electrons in heavily doped n-type 4H SiC

(2011) Dariya V. Savchenko et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

EPR and ENDOR Studies of Shallow Donors in SiC

(2010) N. T. Son et al.   APPLIED MAGNETIC RESONANCE

Ferromagnetic ordering of silicon vacancies in N-doped silicon carbide

(2010) Mingwen Zhao et al.   APPLIED PHYSICS LETTERS

First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silicon carbide

(2010) Fengchun Pan et al.   JOURNAL OF APPLIED PHYSICS

Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors

(2009) C. J. Cochrane et al.   JOURNAL OF APPLIED PHYSICS