A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695330]