Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

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(2018)   ADVANCED MATERIALS

Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films

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An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

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Modeling for bipolar resistive memory switching in transition-metal oxides

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The fourth element: characteristics, modelling and electromagnetic theory of the memristor

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Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

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Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

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Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior

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Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

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(2008) Akihito Sawa   Materials Today

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Memristive switching mechanism for metal/oxide/metal nanodevices

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