Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy

Published 2009 View Full Article

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Title
Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 11, Pages 111102
Publisher
Japan Society of Applied Physics
Online
2009-11-20
DOI
10.1143/jjap.48.111102

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