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Title
Graphene microwave transistors on sapphire substrates
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 11, Pages 113502
Publisher
AIP Publishing
Online
2011-09-13
DOI
10.1063/1.3633105
References
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Related references
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- Sub-100 nm Channel Length Graphene Transistors
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- Boron nitride substrates for high-quality graphene electronics
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- (2009) J.S. Moon et al. IEEE ELECTRON DEVICE LETTERS
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- Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
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- Transport Properties of Graphene in the High-Current Limit
- (2009) Amelia Barreiro et al. PHYSICAL REVIEW LETTERS
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- (2008) Inanc Meric et al. Nature Nanotechnology
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