Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

(2010) G. Koblmüller et al.   APPLIED PHYSICS LETTERS

Experimental evidence for ferromagnetism at room temperature in MgO thin films

(2010) Mukes Kapilashrami et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Ferromagnetism of undoped GaN mediated by through-bond spin polarization between nitrogen dangling bonds

(2009) Hao Jin et al.   APPLIED PHYSICS LETTERS

Local magnetic moment induced by Ga vacancy defect in GaN

(2008) Jisang Hong   JOURNAL OF APPLIED PHYSICS

Room-temperature ferromagnetism in undopedGaNandCdSsemiconductor nanoparticles

(2008) C. Madhu et al.   PHYSICAL REVIEW B

Defect-Induced Intrinsic Magnetism in Wide-Gap III Nitrides

(2008) Pratibha Dev et al.   PHYSICAL REVIEW LETTERS

Optical and structural properties of Mg-ion implanted GaN nanowires

(2008) P.J. Huang et al.   VACUUM