Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3598433
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Funding
- European Research Council under the European Union/ERC [FP7/2007-2013, 239865]
- FWO-Vlaanderen
- U.S. DOE Office of Science, Office of Basic Energy Sciences [DE-FG02-03ER46037, DE-AC02-98CH10886]
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The initial growth of HfO2 was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO2 was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H2O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness. (C) 2011 American Institute of Physics. [doi:10.1063/1.3598433]
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