In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 Plasma

(2011) Qi Xie et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

(2011) Qi Xie et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

In Situ X-ray Fluorescence Measurements During Atomic Layer Deposition: Nucleation and Growth of TiO2 on Planar Substrates and in Nanoporous Films

(2011) Jolien Dendooven et al.   Journal of Physical Chemistry C

In situ synchrotron x-ray characterization of ZnO atomic layer deposition

(2010) D. D. Fong et al.   APPLIED PHYSICS LETTERS

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

(2010) Qi Xie et al.   APPLIED PHYSICS LETTERS

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

(2010) Qi Xie et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

(2009) E Langereis et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Transition behavior of surface morphology evolution of Si(100) during low-energy normal-incidence Ar+ ion bombardment

(2008) Gozde Ozaydin et al.   JOURNAL OF APPLIED PHYSICS