Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Title
Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 4, Pages 042108
Publisher
AIP Publishing
Online
2011-01-29
DOI
10.1063/1.3549198

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search