Article
Nanoscience & Nanotechnology
Robert Sittig, Cornelius Nawrath, Sascha Kolatschek, Stephanie Bauer, Richard Schaber, Jiasheng Huang, Ponraj Vijayan, Pascal Pruy, Simone Luca Portalupi, Michael Jetter, Peter Michler
Summary: In this study, a novel InGaAs metamorphic buffer is developed using metal-organic vapor-phase epitaxy (MOVPE) with a nonlinear indium content grading profile. The thin-film buffer allows for the necessary transition of the lattice constant and provides a smooth surface for the growth of InAs quantum dots, resulting in single-photon emission at 1550 nm. The successful integration of this new design into a photonic resonator demonstrates its potential for high-quality nonclassical light sources in telecommunication.
Article
Optics
Jinkwan Kwoen, Takaya Imoto, Yasuhiko Arakawa
Summary: This study fabricates an E-band InAs/GaAs QD laser on a GaAs substrate with an AlInGaAs multifunctional metamorphic buffer layer, demonstrating lasing oscillation at a wavelength of 1428 nm at room temperature. This result paves the way toward the realization of highly efficient light sources suitable for E-band telecommunications.
Article
Physics, Applied
A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jons, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti
Summary: In this study, self-assembly of InAs/InAlAs quantum dots was achieved using the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, along with preferential nucleation sites at step edges, allowed for fast growth while maintaining quantum dot symmetry. These quantum dots emit in the 1.3 μm telecom O-band with low fine structure splitting, making them suitable for photon sources in quantum communication networks utilizing entangled photons.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Junjie Yang, Zizhuo Liu, Pamela Jurczak, Mingchu Tang, Keshuang Li, Shujie Pan, Ana Sanchez, Richard Beanland, Jin-Chuan Zhang, Huan Wang, Fengqi Liu, Zhibo Li, Samuel Shutts, Peter Smowton, Siming Chen, Alwyn Seeds, Huiyun Liu
Summary: This paper investigates the replacement of a thin Ge buffer layer for part of the GaAs buffer layer in a III-V quantum-dot laser grown on Si, resulting in improved laser performance. By using this approach, a very high operating temperature of 130 degrees Celsius has been demonstrated for the InAs/GaAs QD laser.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
M. Al Huwayz, D. A. Jameel, Walter M. de Azevedo, Jorlandio F. Felix, N. Al Saqri, O. M. Lemine, S. Abu Alrub, M. Henini
Summary: This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth. Furthermore, this study highlights the importance of considering substrate materials in the design of radiation-hardened electronic devices.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2023)
Review
Engineering, Electrical & Electronic
L. Seravalli
Summary: InAs quantum dots grown on relaxed, metamorphic InGaAs buffers have enabled the development of devices based on GaAs substrates. Over the past 20 years, the redshift in emission wavelength provided by the reduction of strain in QDs has led to the development of optoelectronic devices operating in the important C-band of telecommunications at 1.55 μm. This review discusses the fundamental properties of metamorphic InAs/InGaAs quantum dot nanostructures and presents their applications in various devices, highlighting their unique engineering possibilities for next-generation QD devices.
MICROELECTRONIC ENGINEERING
(2023)
Article
Materials Science, Coatings & Films
Margaret A. Stevens, Wayne McKenzie, Gerald Baumgartner, Joel Q. Grim, Samuel G. Carter, Allan S. Bracker
Summary: We investigate the manipulation of surface diffusion to grow quantum dots without using high-index substrates or metamorphic buffers by molecular beam epitaxy. We compare the surface diffusion characteristics of In on In0.52Al0.48As with In and Ga on In0.53Ga0.47As, and apply a two-step arsenic exposure protocol to modify the droplet crystallization step, resulting in a series of different nanostructure morphologies with narrow-linewidth emission between 1200 and 1520 nm at 4 K. We ultimately demonstrate that controlling surface diffusion of the group-III species during growth is critical for achieving quantum dots appropriate for single-photon sources at telecommunication wavelengths.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Chemistry, Physical
Pawel Wyborski, Pawel Podemski, Piotr Andrzej Wronski, Fauzia Jabeen, Sven Hoefling, Grzegorz Sek
Summary: This study presents the optical characterization of GaAs-based InAs quantum dots (QDs) and reveals that the height of the QDs dominates the energies of optical transitions. The study also observes the polarization anisotropy of QD emission and determines the carrier activation energies and main channels of carrier loss through photoreflectance measurements. Furthermore, the study confirms the zero-dimensional nature of the emission through photoluminescence measurements of single QDs.
Correction
Optics
Jinkwan Kwoen, Takaya Imoto, Yasuhiko Arakawa
Summary: This is an article presenting an erratum to correct inadvertent errors in a previous paper. The corrections made will not affect the main conclusion.
Article
Optics
Hao Liang, Tingting Jin, Chaodan Chi, Jialiang Sun, Xiaolei Zhang, Tiangui You, Min Zhou, Jiajie Lin, Shumin Wang
Summary: This research successfully fabricated communication band InAs QD ridge waveguide lasers on GaAsOI substrates using ion-slicing technique and molecular beam epitaxy growth. The devices showed comparable performance to those on GaAs substrates, demonstrating great potential for highly integrated light sources on silicon for photonic integrated circuits.
Article
Optics
Yongli Wang, Bojie Ma, Jian Li, Zhuoliang Liu, Chen Jiang, Chuanchuan Li, Hao Liu, Yidong Zhang, Yang Zhang, Qi Wang, Xinyu Xie, Xiaolang Qiu, Xiaomin Ren, Xin Wel
Summary: In this paper, a simple method is presented to reduce the threading dislocation density (TDD) by using a GaAs buffer, eliminating the need for complicated dislocation filter layers (DFLs) and intermediate buffer layers. A high-quality epitaxial GaAs film was grown on Si (001) by MOCVD, with a TDD of 9.4 x 10(6) cm(-2). InAs/GaAs QDs were grown on this GaAs/Si (001) virtual substrate by MBE, and a high-power QD laser was fabricated, achieving a room temperature continuous-wave output power of 138mW with a threshold current density of 397 A/cm(2) and a lasing wavelength of 1306 nm. This work proposes a simplified method for fabricating high-power QD lasers, which could promote the application of photonic integrated circuits.
Article
Optics
Jing-Zhi Huang, Wen-Qi Wei, Jia-Jian Chen, Zi-Hao Wang, Ting Wang, Jian-Jun Zhang
Summary: This study achieved the monolithic integration of a stable III-V laser on a standard silicon-on-insulator substrate, proposed a double-side heat dissipation design, successfully demonstrated room-temperature operation of InAs/GaAs QD lasers, and showed the effectiveness of top heat sink design through thermal profile simulation.
Article
Optics
Nikita Yu Gordeev, Marina M. Kulagina, Yuliya A. Guseva, Artem A. Serin, Alexey S. Payusov, Grigorij O. Kornyshov, Fedor Zubov, Alexey E. Zhukov, Mikhail Maximov
Summary: An original design of ring semiconductor lasers based on InAs/InGaAs/GaAs quantum dots has been proposed and tested. The lasers have promising applications in clock pulse generation, optical sensing, biological and medical fields, and microwave photonics. Lasing was achieved at room temperature with a low nominal threshold current density and an output power of 45 mW in continuous wave mode.
LASER PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
J. Kwoen, W. Zhan, Y. Arakawa
Summary: InAs quantum dots (QDs) are being researched as the next-generation E-band light source, offering high-temperature operation and temperature insensitive performance. However, high-density crystal defects at the interface between the InGaAs buffer layer and GaAs have been a challenge. By introducing high-temperature annealing and a strained layer superlattice filter, E-band QD lasers with promising performance on low threading dislocation density have been demonstrated.
ELECTRONICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Abhiroop Chellu, Eero Koivusalo, Marianna Raappana, Sanna Ranta, Ville Polojarvi, Antti Tukiainen, Kimmo Lahtonen, Jesse Saari, Mika Valden, Heli Seppanen, Harri Lipsanen, Mircea Guina, Teemu Hakkarainen
Summary: Several passivation techniques for close-to-surface InAs/GaAs quantum dots were compared for their ability to preserve optical properties. It was found that AlNx passivation method significantly reduces surface recombination velocity and shows long-term stability.
Article
Chemistry, Multidisciplinary
Marcel S. Claro, Juan P. Martinez-Pastor, Alejandro Molina-Sanchez, Khalil El Hajraoui, Justyna Grzonka, Hamid Pashaei Adl, David Fuertes Marron, Paulo J. Ferreira, Oleksandr Bondarchuk, Sascha Sadewasser
Summary: Bandgap engineering and quantum confinement in semiconductor heterostructures allow for fine-tuning of material response to electromagnetic fields and light. However, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge. This study demonstrates the successful van der Waals epitaxy of 2D GaSe and InSe heterostructures on silicon and sapphire substrates with different lattice parameters. The GaSe/InSe heteroepitaxy enables the growth of quantum wells and superlattices with photoluminescence and absorption related to interband transitions.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Vladimir S. Chirvony, Isaac Suarez, Jesus Sanchez-Diaz, Rafael S. Sanchez, Jesus Rodriguez-Romero, Ivan Mora-Sero, Juan P. Martinez-Pastor
Summary: An unusual spectrally reproducible near-IR random lasing is observed in chemically stabilized polycrystalline films of formamidinium tin triiodide perovskite. The high Q-factor and low ASE threshold of the lasing are achieved. The spectral stability is explained by the large inhomogeneous broadening of the emitting centers in Sn-based perovskites.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Hamid Pashaei Adl, Setatira Gorji, Andres F. Gualdron-Reyes, Ivan Mora-Sero, Isaac Suarez, Juan P. Martinez-Pastor
Summary: We demonstrate a hybrid dielectric-plasmonic multifunctional structure for controlling the emission properties of CsPbI3 perovskite nanocrystals. The structure consists of a hyperbolic metamaterial and TiO2 spherical MIE nanoresonators. The incorporation of nanoresonators counteracts the reduction in emission intensity caused by the presence of metal in the metamaterial and leads to preferential emission in the normal direction to the metamaterial plane.
Article
Chemistry, Inorganic & Nuclear
Elena Del Canale, Lorenzo Fornari, Chiara Coppi, Giulia Spaggiari, Francesco Mezzadri, Giovanna Trevisi, Patrizia Ferro, Edmondo Gilioli, Massimo Mazzer, Davide Delmonte
Summary: We have developed a new method to synthesize bulk indium nitride and bulk gallium nitride using a solid-state chemical reaction under high-pressure/high-temperature conditions. The reactions involve binary oxides and highly reactive nitrogen sources without the use of gases or solvents. The obtained materials are pure and can be produced in significant quantities for electronic and energy technologies.
INORGANIC CHEMISTRY
(2023)
Article
Materials Science, Multidisciplinary
Hamid Pashaei Adl, Setatira Gorji, Guillermo Munoz-Matutano, Andres F. Gualdron-Reyes, Isaac Suarez, Vladimir S. Chirvony, Ivan Mora-Sero, Juan P. Martinez-Pastor
Summary: This study focuses on the Superradiance (SR) emission observed in superlattices (SLs) formed by CsPbBr3 and CsPbBrI2 nanocrystals (NCs). Micro-Photoluminescence spectra and transients of CsPbBr3 SLs are measured to extract information about the SR states and uncoupled domains of NCs. The study finds that CsPbBr3 SLs with homogeneous SR lines have shorter lifetimes compared to thin films made with the same NCs, and the thermal decoherence of the SR exciton state is evident above a certain temperature due to coupling with phonons.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Francisco Marques-Moros, Carla Boix-Constant, Samuel Manas-Valero, Josep Canet-Ferrer, Eugenio Coronado
Summary: We conducted a comprehensive optical characterization of the van der Waals semiconductor metamagnet CrSBr using temperature- and magnetic-field-dependent photoluminescence. We observed a characteristic peak that disappeared when switching the ferromagnetic layers and exhibited a different temperature dependence from excitonic peaks. This peak's contribution to photoluminescence was enhanced around 30-40 K, coinciding with the hidden order magnetic transition temperature. Our findings reveal the connection between optical and magnetic properties through the ionization of magnetic donor vacancies and demonstrate the potential of designing 2D heterostructures with magnetic and excitonic properties.
Article
Chemistry, Physical
Sergii Golovynskyi, Oleksandr I. Datsenko, Muhammad Usman, Ana I. Perez-Jimenez, Marc Chaigneau, Matteo Bosi, Luca Seravalli, Tarek Hidouri, Iuliia Golovynska, Baikui Li, Honglei Wu
Summary: A comprehensive study is conducted on multilayer PbI2 flakes, including their structure, chemical composition, morphology and photoluminescence (PL). The reduction of thickness leads to uneven spatial mapping of PL and Raman intensities, while the spectra positions and shapes remain unchanged. The most intense peaks in the PL spectra are the direct free exciton (FX) peak at 2.44 eV (508 nm) and the bound exciton (BX) peak at 2.41 eV (516 nm). Three more defect-related peaks at 2.35, 2.19 and 2.04 eV are discovered through above/below-bandgap excitation variation. The origins of these BX peaks are clarified through DFT calculations and experimental results.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
F. Esposito, M. Bosi, G. Attolini, F. Rossi, S. E. Panasci, P. Fiorenza, F. Giannazzo, F. Fabbri, L. Seravalli
Summary: The objective of this study was to compare MoS2 2-dimensional monolayer flakes grown by Chemical Vapour Deposition using different density gradients in the liquid precursors solution. The structures grown using glycerol showed a larger variability in the lateral size of the triangular structure with good crystalline quality, while structures grown using iodixanol exhibited poorer crystalline quality with nanometric pores and more homogeneous sizing of the triangular structures. The lower crystalline quality of iodixanol samples resulted in reduced light emission efficiency and lower mobility.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
L. Seravalli, F. Esposito, M. Bosi, L. Aversa, G. Trevisi, R. Verucchi, L. Lazzarini, F. Rossi, F. Fabbri
Summary: Strain engineering is an efficient tool for adjusting the electrical and optical properties of 2D materials. In this study, we found that the built-in strain in MoS2 monolayers grown on a SiO2/Si substrate is mainly dependent on the size of the monolayer. A critical size of 20 μm was identified, beyond which the built-in strain significantly increased. The maximum built-in strain was observed in a 60 μm sized monolayer, which resulted in 1.2% tensile strain with partial strain release near the triangular vertexes due to nanocrack formation. These findings suggest that the standard method for evaluating the number of layers based on Raman mode separation may be unreliable for highly strained monolayers with a lateral size above 20 μm.
Article
Materials Science, Multidisciplinary
Nahida Musayeva, Hadiya Khalilova, Bakhtiyar Izzatov, Giovanna Trevisi, Shahla Ahmadova, Muhammad Alizada
Summary: This work focuses on the preparation of nanocomposites based on multiwall carbon nanotubes (MWCNTs) and copper (Cu) nanoparticles using a chemical method, and investigates their sensing properties to hydrogen sulfide (H2S) gas. Different deposition methods were used to fabricate Cu decorated multiwall carbon nanotubes (MWCNTs/Cu), and their sensing properties were studied and compared. The impact of chemical functionalization of MWCNTs on the sensing properties of these nanocomposites was also examined. The obtained sensors demonstrated high sensitivity and selectivity to H2S gas at room temperature, and the chemical method showed higher sensitivity compared to the physical method.
C-JOURNAL OF CARBON RESEARCH
(2023)
Article
Materials Science, Multidisciplinary
Marco Girolami, Matteo Bosi, Valerio Serpente, Matteo Mastellone, Luca Seravalli, Sara Pettinato, Stefano Salvatori, Daniele M. M. Trucchi, Roberto Fornari
Summary: The photoelectronic properties of orthorhombic undoped kappa-Ga2O3 epitaxial thin films grown on sapphire substrates using metal-organic vapor phase epitaxy were evaluated for the first time. The films demonstrated linear photoresponse at low dose rates, excellent detection sensitivity, low dark current, and stability, making them promising for the fabrication of large-area X-ray detectors with minimum power consumption.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Paola Frigeri, Enos Gombia, Matteo Bosi, Giovanna Trevisi, Luca Seravalli, Claudio Ferrari
Summary: In this study, we investigated the electrical and morphological properties of randomly arranged Ge nanowires on sapphire substrates. We fabricated nanowire-based devices to develop chemiresistive-type sensors for explosive vapor detection. We observed and discussed the critical role of nanowire-nanowire junctions on electrical conduction and sensing performances. Our proposed mechanism explains the high efficiency of annealed nanowire arrays in detecting 2,4,6-trinitrotoluene vapors. This study demonstrates the promising potential of Ge nanowire-based sensors in civil security.
