Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

(2020) Neul Ha et al.   Applied Physics Express

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

(2020) Sergio Bietti et al.   Scientific Reports

Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates

(2020) Akihiro Ohtake et al.   Scientific Reports

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

(2020) Artur Tuktamyshev et al.   Nanomaterials

Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

(2019) Massimo Gurioli et al.   NATURE MATERIALS

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

(2019) Artur Tuktamyshev et al.   Scientific Reports

Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

(2019) Christopher F. Schuck et al.   Scientific Reports

Strain-Tunable GaAs Quantum Dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand

(2018) Daniel Huber et al.   PHYSICAL REVIEW LETTERS

Semiconductor quantum dots as an ideal source of polarization-entangled photon pairs on-demand: a review

(2018) Daniel Huber et al.   Journal of Optics

A quantum light-emitting diode for the standard telecom window around 1,550 nm

(2018) T. Müller et al.   Nature Communications

High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy

(2017) Francesco Basso Basset et al.   NANO LETTERS

Semiconductor devices for entangled photon pair generation: a review

(2017) Adeline Orieux et al.   REPORTS ON PROGRESS IN PHYSICS

Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths

(2017) Joanna Skiba-Szymanska et al.   Physical Review Applied

Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces

(2017) Luca Esposito et al.   PHYSICAL REVIEW MATERIALS

Growth of Metamorphic InGaAs on GaAs (111)A: Counteracting Lattice Mismatch by Inserting a Thin InAs Interlayer

(2016) Takaaki Mano et al.   CRYSTAL GROWTH & DESIGN

Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A

(2015) Neul Ha et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Precise shape engineering of epitaxial quantum dots by growth kinetics

(2015) Sergio Bietti et al.   PHYSICAL REVIEW B

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

(2015) Manel Souaf et al.   Materials

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

(2014) Christopher D. Yerino et al.   APPLIED PHYSICS LETTERS

Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering

(2013) Takashi Kuroda et al.   PHYSICAL REVIEW B

Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

(2012) F. Herzog et al.   APPLIED PHYSICS LETTERS

Self-Limiting Growth of Hexagonal and Triangular Quantum Dots on (111)A

(2012) Masafumi Jo et al.   CRYSTAL GROWTH & DESIGN

Universal Recovery of the Energy-Level Degeneracy of Bright Excitons in InGaAs Quantum Dots without a Structure Symmetry

(2012) R. Trotta et al.   PHYSICAL REVIEW LETTERS

Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting

(2010) Takaaki Mano et al.   Applied Physics Express

Poissonian statistics of excitonic complexes in quantum dots

(2009) M. Abbarchi et al.   JOURNAL OF APPLIED PHYSICS

Nanowire Quantum Dots as an Ideal Source of Entangled Photon Pairs

(2009) Ranber Singh et al.   PHYSICAL REVIEW LETTERS