Article
Chemistry, Physical
Wondeok Seo, Woojin Park, Hyun Young Seo, Seyoung Oh, Ojun Kwon, Soo Hong Jeong, Do Hyeong Kim, Min Jeong Kim, Sang Kyung Lee, Byoung Hun Lee, Byungjin Cho
Summary: In this study, a molybdenum disulfide (MoS2)/p-Si heterojunction with a graphene (Gr) interfacial layer was used to develop a high-performance infrared (IR) photodetector. The results showed significant improvements in the photoresponsivity and detectivity of the device compared to a control photodiode with a MoS2/p-Si structure. The proposed photoresponsive model highlighted the unique properties of the Gr layer, including its zero band gap and atomically smooth van der Waals interface, which contributed to enhanced electron-hole pair generation and suppressed trap-based recombination. These findings have important implications for applications in high-performance IR detection.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Harith Ahmad, Nima Naderi, Moh Yasin
Summary: The present study introduced an innovative bottom-up technique to grow zinc oxide microspheres by the nanoplatelet assembling with the use of the template-free electrodeposition method. For investigating the photovoltaic performance of developed nanostructures, the ZnO seed layer was coated on the p-type silicon substrates using a radio frequency magnetron sputtering technique to act as an n-type layer and to form a p-n heterojunction. The synthesized ZnO microspheres demonstrated an increase in photon absorption and photoluminescence intensity, leading to improved efficiency of fabricated solar cells.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Chemistry, Physical
Nur Amaliyana Raship, Siti Nooraya Mohd Tawil, Nafarizal Nayan, Khadijah Ismail
Summary: Heterojunction structures of n-ZnO/p-Si were prepared by growing undoped ZnO and (Gd, Al) co-doped ZnO films on p-type Si substrates using co-sputtering. The influence of Al doping concentration on the structural and optical properties of the Gd-doped ZnO films was investigated. The results showed that an increase in Al doping concentration led to a decrease in the (0 0 2) diffraction peak intensity and an increase in the optical gap of the film. The fabricated n-ZnO/p-Si heterojunction diode using (Gd, Al) co-doped ZnO film exhibited the lowest leakage current and closest ideality factor to an ideal diode compared to other heterojunction diodes.
Article
Materials Science, Multidisciplinary
D. Esra Yildiz, Adem Kocyigit, Murat Yildirim
Summary: The importance of photodetectors has increased due to their potential in automation systems and optical communications. In this study, Al/TiO2/p-Si and Al/ZnO/p-Si Schottky-type photodetectors were fabricated and their photodetection properties were compared. The Al/ZnO/p-Si photodetector showed better detection performance at a wavelength of 550 nm.
Article
Engineering, Electrical & Electronic
Fatih Unal
Summary: In this study, a Ge-doped WOx thin film was successfully deposited on a p-type Si wafer using physical vapour deposition technique. The structural analysis revealed the presence of four phases in the deposited thin film. The electrical and photovoltaic properties of the heterojunction were investigated, and it was found that they were influenced by the light intensity.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Jonathan L. Bryan, Joe V. Carpenter, Zhengshan J. Yu, Ashling (Mehdi) Leilaeioun, Jianwei Shi, William Weigand, Kathryn C. Fisher, Zachary C. Holman
Summary: Contacts implemented on the rear side of silicon heterojunction solar cells, such as a-Si:H(i)/a-Si:H(n)/Al and a-Si:H(i)/a-Si:H(p)/Al, demonstrate promising performance in electrical test structures and full-area solar cells. The stability and performance of the contacts are affected by annealing temperature and thickness of doped a-Si:H layers. Transmission electron microscopy and energy-dispersive x-ray spectroscopy analysis help to explain Al-Si interactions at the interfaces and understand the limiting materials properties affecting contact stability.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Shun-Chang Liu, Zongbao Li, Jinpeng Wu, Xing Zhang, Mingjie Feng, Ding-Jiang Xue, Jin-Song Hu
Summary: Germanium monoselenide (GeSe) is a promising photovoltaic absorber material, but traditional solar cells based on this material have low efficiency. By using a substrate configuration and optimizing the annealing temperature, the efficiency of GeSe solar cells has been significantly improved.
SCIENCE CHINA-MATERIALS
(2021)
Review
Chemistry, Multidisciplinary
Nathasya Imanuella, Thongthai Witoon, Yoke Wang Cheng, Chi Cheng Chong, Kim Hoong Ng, I. Made Gunamantha, Dai-Viet N. Vo, Anh Tuan Hoang, Yuekun Lai
Summary: Photocatalysis is a green chemical process that tackles energy and pollution issues. Cobalt titanate, CoTiO3, is a potential catalyst with high oxidative activity, but its performance is limited by charge recombination. The introduction of a second semiconductor through interfacial engineering can enhance its activity.
ENVIRONMENTAL CHEMISTRY LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Teoman Ozturk
Summary: In this study, metal-semiconductor photodiodes were fabricated with different PCBM-doped zinc oxide layers, and their performance parameters were determined using current-voltage measurements and thermionic emission models. PCBM doping increased the light response capacity of the devices, exhibiting excellent rectifying properties.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Kai Tang, Mingming Jiang, Bingwang Yang, Tong Xu, Zeng Liu, Peng Wan, Caixia Kan, Daning Shi
Summary: This study presents a homojunction ultraviolet photodetector by using p-type Sb-doped ZnO microwire and n-type ZnO layer. By engineering the band alignment of the p-ZnO:Sb/n-ZnO homojunction, the optimized photodetector shows enhanced ultraviolet detection capabilities with a light on/off ratio of 1.6 x 10(8), responsivity over 267 mA W-1, and specific detectivity of approximately 1.2 x 10(14) Jones. This research not only synthesizes stable p-type ZnO, but also provides substantial opportunities for developing high-performance ZnO homojunction optoelectronic devices.
Article
Engineering, Electrical & Electronic
Nattakorn Borwornpornmetee, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Adison Nopparuchikun, Boonchoat Paosawatyanyong, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Nathaporn Promros
Summary: In this study, the electrochemical characteristics of Al/n-NC FeSi2/p-Si/Pd heterostructures were investigated using impedance spectroscopy. The results showed that the values of resistance and constant phase element in the equivalent circuit of the heterostructures changed with biased voltage. The real permittivity values varied at different frequencies, and the loss tangent was high, indicating leakage in the device. The alternating conductivities started at low frequencies and exponentially increased as the frequency increased. The direct current conductivity also varied with biased voltage.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Applied
Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, Naoteru Shigekawa
Summary: In this study, we evaluated the current-voltage (I-V) and temperature-dependent I-V characteristics of p(+)-Si/p-diamond heterojunction diodes (HDs) fabricated using surface-activated bonding and compared their characteristics with those of Al/p-diamond Schottky barrier diodes (SBDs) fabricated on the same diamond substrate. We found that the characteristics of HDs were improved by annealing, with decreased ideality factor, reverse-bias current, and enhanced on/off ratio, while the characteristics of SBDs showed different responses to annealing. The barrier height at the Si/diamond bonding interfaces decreased after annealing, indicating a decrease in the density of interface states.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Jing Yao, Mingyi Zhang, Xinzhi Ma, Lingling Xu, Feng Gao, Junpeng Xiao, Hong Gao
Summary: The study successfully improved the catalytic activity of oxygen evolution reaction by fabricating a CoP-CoO p-p type heterojunction array, providing insights for the design of efficient heterojunction catalysts.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Ransheng Chen, Qiang Li, Qifan Zhang, Mingdi Wang, Wannian Fang, Zhihao Zhang, Feng Yun, Tao Wang, Yue Hao
Summary: In this study, a series of h-BN/B1-xAlxN heterojunctions with different Al components were fabricated by RF magnetron sputtering, and the performance of the heterojunctions was measured via I-V characteristic representation. The h-BN/B0.89Al0.11N heterojunction exhibited the best performance due to high lattice matching. XPS analysis revealed a type-II (staggered) band alignment in this heterojunction, and DFT calculation further confirmed the existence of a built-in field and an Al-N covalent bond at the interface. This work provides a pathway for the construction of ultrawide band gap heterojunctions for next-generation photovoltaic applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Tran Chien Dang, Van Thai Dang, Tien Dai Nguyen, Thi Hien Truong, Minh Tan Man, Thi Thu Hien Bui, Thi Kim Chi Tran, Dai Lam Tran, Phuong Dung Truong, Cao Khang Nguyen, Viet Chien Nguyen, Dong-Bum Seo, Eui-Tae Kim
Summary: This study demonstrated the synthesis of few-layers MoS2 flakes coated on p-Si nanorods using MOCVD, resulting in vertically-standing morphology and improved photoconversion efficiency. The MoS2/p-SiNRs heterojunction sample exhibited a positively shifted onset voltage and higher photoelectrical performance.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
