Electronic Properties of Vertically Stacked h-BN/B1–xAlxN Heterojunction on Si(100)
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Title
Electronic Properties of Vertically Stacked h-BN/B1–xAlxN Heterojunction on Si(100)
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 15, Issue 12, Pages 16211-16220
Publisher
American Chemical Society (ACS)
Online
2023-03-21
DOI
10.1021/acsami.2c22374
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Note: Only part of the references are listed.- A novel strategy for GaN-on-diamond device with a high thermal boundary conductance
- (2022) Fengwen Mu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)
- (2022) Kyung Yeol Ma et al. NATURE
- Towards n-type conductivity in hexagonal boron nitride
- (2022) Shiqiang Lu et al. Nature Communications
- Two‐Inch Wafer‐Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF‐Sputtering
- (2022) Qiang Li et al. ADVANCED FUNCTIONAL MATERIALS
- Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition
- (2022) Jingren Chen et al. APPLIED SURFACE SCIENCE
- Phase transition and bandgap engineering in B1-Al N alloys: DFT calculations and experiments
- (2021) Qifan Zhang et al. APPLIED SURFACE SCIENCE
- AA h BN crystal, basic structure of boron nitride nanotubes
- (2021) Jae-Kap Lee et al. IUCrJ
- S-Scheme Heterojunction Photocatalyst
- (2020) Quanlong Xu et al. Chem
- Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate
- (2020) Xu Yang et al. ACS Applied Materials & Interfaces
- Band alignment at β-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
- (2020) Sai Lyu et al. APPLIED PHYSICS LETTERS
- Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering
- (2020) Qiang Li et al. Optical Materials Express
- First‑principles calculations of the electronic, and optical properties of a GaAs/AlAs van der Waals heterostructure
- (2020) Fang Yao et al. CHEMICAL PHYSICS LETTERS
- A CsPbBr3 quantum dots/ultra-thin BN fluorescence sensor for stability and highly sensitive detection of tetracycline
- (2020) Wei Wang et al. MICROCHEMICAL JOURNAL
- Bandgap engineering and charge separation in two-dimensional GaS-based van der Waals heterostructures for photocatalytic water splitting
- (2018) Biao Wang et al. APPLIED SURFACE SCIENCE
- Infrared hyperbolic metasurface based on nanostructured van der Waals materials
- (2018) Peining Li et al. SCIENCE
- Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)
- (2018) Ming-Wei Chen et al. ACS Nano
- Structural and electronic properties of wurtzite B x Al1-x N from first-principles calculations
- (2017) Muwei Zhang et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Mechanical properties of atomically thin boron nitride and the role of interlayer interactions
- (2017) Aleksey Falin et al. Nature Communications
- Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
- (2017) Peigang Li et al. Journal of Materials Chemistry C
- Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection
- (2016) K. Ahmed et al. APPLIED PHYSICS LETTERS
- Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire
- (2016) A-Rang Jang et al. NANO LETTERS
- Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure
- (2016) Min-Kyu Joo et al. NANO LETTERS
- The electronic and optical properties of novel germanene and antimonene heterostructures
- (2016) Xianping Chen et al. Journal of Materials Chemistry C
- Synthesis of large-area multilayer hexagonal boron nitride for high material performance
- (2015) Soo Min Kim et al. Nature Communications
- Electronic properties of MoS2/h-BN heterostructures: Impact of dopants and impurities
- (2014) Roland Gillen et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Indirect doping effects from impurities inMoS2/h-BNheterostructures
- (2014) Roland Gillen et al. PHYSICAL REVIEW B
- Nanoscale metal oxide-based heterojunctions for gas sensing: A review
- (2014) Derek R. Miller et al. SENSORS AND ACTUATORS B-CHEMICAL
- Growth of High-Crystalline, Single-Layer Hexagonal Boron Nitride on Recyclable Platinum Foil
- (2013) Gwangwoo Kim et al. NANO LETTERS
- Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
- (2012) J. Li et al. APPLIED PHYSICS LETTERS
- Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
- (2012) S. Majety et al. APPLIED PHYSICS LETTERS
- Photoluminescence of boron nitride nanosheets exfoliated by ball milling
- (2012) Lu Hua Li et al. APPLIED PHYSICS LETTERS
- Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics
- (2012) Kang Hyuck Lee et al. NANO LETTERS
- van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations
- (2012) T. Björkman et al. PHYSICAL REVIEW LETTERS
- Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition
- (2010) Yumeng Shi et al. NANO LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
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