Compensation-dependence of magnetic and electrical properties in Ga1−xMnxP

Electronic structure ofGa1−xMnxAsanalyzed according to hole-concentration-dependent measurements

(2010) M. A. Mayer et al.   PHYSICAL REVIEW B

Curie temperature versus hole concentration in field-effect structures ofGa1−xMnxAs

(2010) Y. Nishitani et al.   PHYSICAL REVIEW B

First-principles theory of dilute magnetic semiconductors

(2010) K. Sato et al.   REVIEWS OF MODERN PHYSICS

Nonmagnetic compensation in ferromagnetic Ga1−xMnxAs and Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting

(2008) M. A. Scarpulla et al.   JOURNAL OF APPLIED PHYSICS

Suppression of hole-mediated ferromagnetism in Ga1−xMnxP by hydrogen

(2008) C. Bihler et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of III-Mn-V ferromagnetic semiconductors

(2008) K.S. Burch et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

Compensation-dependent in-plane magnetization reversal processes inGa1−xMnxP1−ySy

(2008) P. R. Stone et al.   PHYSICAL REVIEW B

Metal-Insulator Transition by Isovalent Anion Substitution inGa1−xMnxAs: Implications to Ferromagnetism

(2008) P. R. Stone et al.   PHYSICAL REVIEW LETTERS