Electronic structure ofGa1−xMnxAsanalyzed according to hole-concentration-dependent measurements

Effects of donor doping on Ga1−xMnxAs

(2009) Y. J. Cho et al.   APPLIED PHYSICS LETTERS

Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements

(2008) J. W. Ager et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Compensation-dependent in-plane magnetization reversal processes inGa1−xMnxP1−ySy

(2008) P. R. Stone et al.   PHYSICAL REVIEW B

Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing

(2008) K. Alberi et al.   PHYSICAL REVIEW B

Metal-Insulator Transition by Isovalent Anion Substitution inGa1−xMnxAs: Implications to Ferromagnetism

(2008) P. R. Stone et al.   PHYSICAL REVIEW LETTERS

Curie Point Singularity in the Temperature Derivative of Resistivity in (Ga,Mn)As

(2008) V. Novák et al.   PHYSICAL REVIEW LETTERS

Magnetic Circular Dichroism from the Impurity Band in III-V Diluted Magnetic Semiconductors

(2008) Jian-Ming Tang et al.   PHYSICAL REVIEW LETTERS