Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(2010) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Conduction and Low-Frequency Noise Analysis in $ \hbox{Al}/\alpha\hbox{-TiO}_{X}/\hbox{Al}$ Bipolar Switching Resistance Random Access Memory Devices

(2010) Jung-Kyu Lee et al.   IEEE ELECTRON DEVICE LETTERS

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

(2010) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

(2009) Hu Young Jeong et al.   APPLIED PHYSICS LETTERS

Highly durable and flexible memory based on resistance switching

(2009) Sungho Kim et al.   SOLID-STATE ELECTRONICS

Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications

(2008) Lee-Eun Yu et al.   IEEE ELECTRON DEVICE LETTERS