4.6 Article

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Journal

APPLIED PHYSICS LETTERS
Volume 98, Issue 24, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3599063

Keywords

-

Funding

  1. U.S. National Science Foundation [DMR-0906909]
  2. U.S. DOE [DE-AC02-06CH11357]
  3. Division Of Materials Research
  4. Direct For Mathematical & Physical Scien [0906909] Funding Source: National Science Foundation

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We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599063]

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