Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors

Published 2011 View Full Article

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Title
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages 153510
Publisher
AIP Publishing
Online
2011-10-15
DOI
10.1063/1.3652909
References
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