Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors

标题
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages 153510
出版商
AIP Publishing
发表日期
2011-10-15
DOI
10.1063/1.3652909

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