Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

(2010) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

(2010) A. Armstrong et al.   JOURNAL OF ELECTRONIC MATERIALS

A Reliability Study on Green InGaN–GaN Light-Emitting Diodes

(2009) Z. L. Li et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices

(2009) D. J. Chen et al.   JOURNAL OF APPLIED PHYSICS

Reliability analysis of InGaN Blu-Ray laser diode

(2009) Nicola Trivellin et al.   MICROELECTRONICS RELIABILITY

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

(2008) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

(2008) A. Armstrong et al.   JOURNAL OF APPLIED PHYSICS