4.6 Article

Capacitance-voltage characteristics of organic Schottky diode with and without deep traps

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3607955

Keywords

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Funding

  1. CSIR, India
  2. DST, Government of India

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Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Deep traps in organic thin films introduced by varying growth conditions have been identified and characterized by voltage and temperature dependence of capacitance. These results are interpreted using a consistent modelling of capacitance of organic Schottky diode with and without deep traps. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607955]

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