Deep levels in tungsten doped n-type 3C–SiC

Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC

(2011) S. Sasaki et al.   JOURNAL OF APPLIED PHYSICS

Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

(2010) Stefano Leone et al.   Physica Status Solidi-Rapid Research Letters

Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

(2009) Toru Hiyoshi et al.   Applied Physics Express

Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

(2009) Toru Hiyoshi et al.   Applied Physics Express

Toward an ideal Schottky barrier on 3C-SiC

(2009) Jens Eriksson et al.   APPLIED PHYSICS LETTERS

Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers

(2008) Liutauras Storasta et al.   JOURNAL OF APPLIED PHYSICS

Single versus double ion implantation: a deep level study

(2008) G. Alfieri et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

(2008) H. Pedersen et al.   Physica Status Solidi-Rapid Research Letters