Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3099902
Keywords
antimony; current density; etching; gallium arsenide; III-V semiconductors; indium compounds; MOCVD coatings; photoluminescence; semiconductor quantum dots; surfactants
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Funding
- MEXT
- Special Coordination Funds for Promoting Science and Technology
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We present a method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated metal organic chemical vapor deposition. This process consists of removing the excess segregated antimony from the surface of InAs/Sb:GaAs QDs by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of InAs/Sb:GaAs QDs (high density, low coalescence) without the formation of antimony-induced nonradiative defects. Finally, we show that this better QD interface quality results in a strong decrease of the threshold current densities of InAs/Sb:GaAs QD lasers in the 1.3 mu m band.
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