Real-time study ofa−Si:H∕c−Siheterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

Title
Real-time study ofa−Si:H∕c−Siheterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 77, Issue 20, Pages -
Publisher
American Physical Society (APS)
Online
2008-05-30
DOI
10.1103/physrevb.77.205329

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