Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Published 2010 View Full Article

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Title
Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 4, Pages 042903
Publisher
AIP Publishing
Online
2010-01-29
DOI
10.1063/1.3291620
References
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