Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN

(2009) V. Darakchieva et al.   APPLIED PHYSICS LETTERS

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

(2009) V. Darakchieva et al.   APPLIED PHYSICS LETTERS

Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

(2009) S. Ruffenach et al.   APPLIED PHYSICS LETTERS

Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

(2009) V. Darakchieva et al.   APPLIED PHYSICS LETTERS

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN

(2009) Chad S. Gallinat et al.   APPLIED PHYSICS LETTERS

High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

(2009) F González-Posada Flores et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Role of impurities and dislocations for the unintentional n-type conductivity in InN

(2009) V. Darakchieva et al.   PHYSICA B-CONDENSED MATTER

Sources of unintentional conductivity in InN

(2008) Anderson Janotti et al.   APPLIED PHYSICS LETTERS