Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

标题
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 97, Issue 23, Pages 232107
出版商
AIP Publishing
发表日期
2010-12-11
DOI
10.1063/1.3518717

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