GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

(2009) X. Ni et al.   APPLIED PHYSICS LETTERS

Growth and properties of semi-polar GaN on a patterned silicon substrate

(2009) Nobuhiko Sawaki et al.   JOURNAL OF CRYSTAL GROWTH

High quality AlN grown on SiC by metal organic chemical vapor deposition

(2008) Z. Chen et al.   APPLIED PHYSICS LETTERS

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

(2008) S. Suthram et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

(2008) Kai Cheng et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

(2008) W. Feng et al.   JOURNAL OF APPLIED PHYSICS

Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPE

(2008) T. Tanikawa et al.   JOURNAL OF CRYSTAL GROWTH